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Publications by E.G. Polyakova
DEVICE STRUCTURES BASED ON Β-FeSi2 (OVERVIEW)
Electronic engineering. Series 2. Semiconductor device
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Itinerant Magnetism in Doped Semiconducting Β-FeSi2 and CrSi2
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Growth of P-Type Β-FeSi2 Polycrystalline Films by RF Magnetron Sputtering
A Review on Power MOSFET Device Structures
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Electric Properties of Carbon-Doped N-Type Β-FeSi2/P-Type Si Heterojunction Diodes
