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Publications by Ei Ei Nyein

Photoluminescence Properties of in Situ Tm-Doped AlxGa1−xN

Applied Physics Letters

English

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First-Principles Investigation of Structural and Electronic Properties of the BxGa1-xN, BxAl1-xN, AlxGa1-xN and BxAlyGa1-x-yN Compounds

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Raman Analysis of the Configurational Disorder in AlxGa1−xN Films

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Photoluminescence Properties of Erbium Doped InGaN Epilayers

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Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

MRS Internet Journal of Nitride Semiconductor Research

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Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells

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Thermal and Photoluminescence Properties of Nd3+ Doped Tellurite Nanoglass

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AlxGa1−xN-based Avalanche Photodiodes With High Reproducible Avalanche Gain

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Photoluminescence of Carbon in Situ Doped GaN Grown by Halide Vapor Phase Epitaxy

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Transmission-Mode GaN Photocathode Based on Graded AlxGa1?xN Buffer Layer

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Electronic Engineering

Molecular Physics,

Magnetic Materials

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