Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Emil C. Piscani
Resist Process Window Characterization for the 45-Nm Node Using an Interferometric Immersion Microstepper
Related publications
193 Nm Resist Line Collapse Study by Modifying the Resist Polymer and Process Conditions With Utilizing FIRM Process
Journal of Photopolymer Science and Technology
Organic Chemistry
Polymers
Materials Chemistry
Plastics
Immersion Lithography: Topcoat and Resist Processes
SPIE Newsroom
Quantitative Impedance Characterization of Sub-10 Nm Scale Capacitors and Tunnel Junctions With an Interferometric Scanning Microwave Microscope
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
An Optical Interferometric Triaxial Displacement Sensor for Structural Health Monitoring: Characterization of Sliding and Debonding for a Delamination Process
Sensors
Instrumentation
Information Systems
Electronic Engineering
Biochemistry
Analytical Chemistry
Molecular Physics,
Electrical
Atomic
Medicine
Optics
Comparison of Various Lithography Strategies for the 65- And 45-Nm Half Pitch Using Simulation
Chemically Amplified Si-Contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and Its Application to Bi-Layer Resist Process.
Journal of Photopolymer Science and Technology
Organic Chemistry
Polymers
Materials Chemistry
Plastics
Solid-Immersion Imaging Interferometric Nanoscopy to the Limits of Available Frequency Space
Journal of the Optical Society of America A: Optics and Image Science, and Vision
Pattern Recognition
Optics
Molecular Physics,
Computer Vision
Optical
Atomic
Magnetic Materials
Medicine
Electronic
In Situ Analysis of the EUV Resist Pattern Formation During the Resist Dissolution Process
Journal of Photopolymer Science and Technology
Organic Chemistry
Polymers
Materials Chemistry
Plastics
Developing Multi-Layer Mirror Technology Near 45 Nm Using Sc/Si Interfaces
