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Publications by Federico Faccio
Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28 Nm Bulk MOSFETs
IEEE Transactions on Nuclear Science
Electronic Engineering
Nuclear
Nuclear Energy
High Energy Physics
Engineering
Electrical
Related publications
60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs
Indian Journal of Materials Science
Total-Ionizing-Dose-Induced Body Shielding Effect in 130 Nm T-Gate Pdsoi I/O Nmosfets
Total Ionizing Dose (TID) Effects of Γ Ray Radiation on Switching Behaviors of Ag/AlOx/Pt RRAM Device
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Investigation of Heavy-Ion Induced Single-Event Transient in 28 Nm Bulk Inverter Chain
Symmetry
Mathematics
Chemistry
Physics
Computer Science
Astronomy
Response of a 0.25 Μm Thin-Film Silicon-On-Sapphire CMOS Technology to Total Ionizing Dose
Journal of Instrumentation
Instrumentation
Mathematical Physics
Sub-40 Nm SOI V-Groove N-MOSFETs
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A 28 Nm Bulk-Cmos Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors
Sensors
Instrumentation
Information Systems
Electronic Engineering
Biochemistry
Analytical Chemistry
Molecular Physics,
Electrical
Atomic
Medicine
Optics
Total Dose Effects on 4h-SiC Bipolar Junction Transistors
Materials Science Forum
Recovery of CHC- And NBTI-induced Degradation on MOSFETs by Using Different Annealing Treatments
