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Publications by G Langouche
Emission Channeling Studies of Implanted 167mEr in InP
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
Lattice Location of Implanted Cu in Si
Physica B: Condensed Matter
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Related publications
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics
Astronomy
Physics
Fully Ion-Implanted InP JFET With Buried P-Layer
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Enhanced Terahertz Emission From Porous InP (111) Membranes
Applied Physics Letters
Astronomy
Physics
High Temperature Rapid Thermal Annealing of Phosphorous Ion Implanted InAs∕InP Quantum Dots
Applied Physics Letters
Astronomy
Physics
Investigation of Two-Photon Emission in Strong Field QED Using Channeling in a Crystal
Physical Review D
Astronomy
Physics
Stability Studies of Hg Implanted YBa2Cu3O6+x
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
PAC Studies of Implanted 111Ag in Single-Crystalline ZnO
Electron Microscopy Studies of Ion Implanted Silicon
Control of Spontaneous Emission From InP Single Quantum Dots in GaInP Photonic Crystal Nanocavities
Applied Physics Letters
Astronomy
Physics