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Publications by Gen Feng

Annealing Effect on Tunneling Magnetoresistance in MgO-based Magnetic Tunnel Junctions With FeMn Exchange-Bias Layer

Journal of Magnetism and Magnetic Materials

Condensed Matter Physics

Magnetic Materials

English

Related publications

Large Inverse Tunneling Magnetoresistance in Co2Cr0.6Fe0.4Al∕MgO∕Co80Fe20 Magnetic Tunnel Junctions

Applied Physics Letters

English

Annealing of CoFeB/MgO Based Single and Double Barrier Magnetic Tunnel Junctions: Tunnel Magnetoresistance, Bias Dependence, and Output Voltage

Journal of Applied Physics

English

Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions With CoFeB Electrodes

Physical Review B

English

Effects of B and C Doping on Tunneling Magnetoresistance in CoFe/MgO Magnetic Tunnel Junctions

Physical Review B

Condensed Matter Physics

Magnetic Materials

English

Magnetic Stability Under Magnetic Cycling of MgO-based Magnetic Tunneling Junctions With an Exchange-Biased Synthetic Antiferromagnetic Pinned Layer

English

Magnetoresistance and Structure of MgO-Based Magnetic Tunnel Junctions With Perpendicularly Magnetized L10-FePt

Journal of the Magnetics Society of Japan

Electronic Engineering

Condensed Matter Physics

Instrumentation

Magnetic Materials

English

Giant Tunnel Magnetoresistance in Magnetic Tunnel Junctions With a Crystalline MgO(0 0 1) Barrier

Journal of Physics D: Applied Physics

Condensed Matter Physics

Magnetic Materials

English

Interlayer Exchange Coupling in Fe∕MgO∕Fe Magnetic Tunnel Junctions

Applied Physics Letters

English

Noise in MgO Barrier Magnetic Tunnel Junctions With CoFeB Electrodes: Influence of Annealing Temperature

Applied Physics Letters

English