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Publications by Giovanni A. Salvatore
Charge Trapping Mechanism Leading to Sub-60-mV/Decade-Swing FETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Positive Charge Trapping Phenomenon in N-Channel Thin-Film Transistors With Amorphous Alumina Gate Insulators
Journal of Applied Physics
Astronomy
Physics
Related publications
InGaAs Tunnel FET With Sub-Nanometer EOT and Sub-60 mV/dec Sub-Threshold Swing at Room Temperature
Applied Physics Letters
Astronomy
Physics
Carbon Nanotubes: From Growth, Placement and Assembly Control to 60mV/Decade and Sub-60 mV/decade Tunnel Transistors
Sub-60 mV/decade Switching in 2D Negative Capacitance Field-Effect Transistors With Integrated Ferroelectric Polymer
Applied Physics Letters
Astronomy
Physics
An Analytical Subthreshold Current/Swing Model for Junctionless Cylindrical Nanowire FETs (JLCNFETs)
Facta universitatis - series: Electronics and Energetics
[2Fe2S]铁硫蛋白活性中心模型[Fe<SUB>2</Sub>s<sub>2</Sub> (SR) <sub>4</Sub>]<sup>2–</Sup> (R= —H, —CH<SUB>3</SUB>)的局部自旋探讨
Science in China Series B-Chemistry (in Chinese)
<em>o</Em>-, <em>m</Em>-, <em>p</Em>-IC<sub>6</Sub>H<sub>4</Sub>OCH<sub>3</Sub>的电子结构和取代基效应
Science in China Series B-Chemistry (in Chinese)
Cl<SUB>2</SUB>+2HBr=2HCl+Br<SUB>2</Sub>反应的机理和应用
Science in China Series B-Chemistry (in Chinese)
MRCI及其近似方法下C<SUB>2</SUB>分子<EM>X</EM><SUP>1</SUP><EM>Σ</EM><SUP>+</SUP><SUB><EM>g</EM></SUB>, <em>b</Em><sup>1</SUP><EM>Δ<SUB>g</Sub></Em>和 <br><em>b</Em>′<sup>1</Sup><em>σ</Em><sup>+</SUP><EM><SUB>g</Sub></Em>态的势能曲线 <BR>
Science in China Series B-Chemistry (in Chinese)
An Unusual Mechanism for Negative Differential Resistance in Ferroelectric Nanocapacitors: Polarization Switching-Induced Charge Injection Followed by Charge Trapping
