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Publications by Guo-Yong Fang
Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Related publications
Enhanced Resistive Switching Characteristics in Pt/BaTiO3/Ito Structures Through Insertion of HfO2:Al2O3 (HAO) Dielectric Thin Layer
Scientific Reports
Multidisciplinary
Silicon Diffusion Control in Atomic-Layer-Deposited Al2O3/La2O3/Al2O3 Gate Stacks Using an Al2O3 Barrier Layer
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures
Silicon Surface Passivation by Atomic Layer Deposited Al2O3
Journal of Applied Physics
Astronomy
Physics
Interface Effect on Dielectric Constant of HfO2∕Al2O3 Nanolaminate Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Applied Physics Letters
Astronomy
Physics
Enhanced Non-Volatile Memory Characteristics With Quattro-Layer Graphene Nanoplatelets vs. 2.85-Nm Si Nanoparticles With Asymmetric Al2O3/HfO2 Tunnel Oxide
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Effect of Substrate Pretreatments on the Atomic Layer Deposited Al2O3 Passivation Quality
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
Nanomaterials
Materials Science
Chemical Engineering
On the Structural and Electrical Properties of Ferroelectric BiFeO3/HfO2 Gate Stack for Non-Volatile Memory Applications
Journal of Advanced Dielectrics
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Composites
Electronic
Ceramics
