Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by H. Achard
Raised Source/Drain (RSD) for 50nm MOSFETs - Effect of Epitaxy Layer Thickness on Short Channel Effects
Related publications
Comparison of Raised and Schottky Source/Drain MOSFETs Using a Novel Tunneling Contact Model
The Effects of Nitridation and Re-Oxidation on Drain Leakage Current in N-Channel MOSFETs
Investigation of the Gate Capacitance Characteristics of Short Channel MOSFETs.
Polycrystalline Silicon Thin-Film Transistor With Self-Aligned SiGe Raised Source/Drain
Applied Physics Letters
Astronomy
Physics
Characterization of Ultrathin SOI Film and Application to Short Channel MOSFETs
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
Physical Mechanism of Source and Drain Resistance Reduction in Oxide TFT ～Towards High-Performance Short-Channel InGaZnO TFT～
60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs
Indian Journal of Materials Science
The Effect of Substrate Purity on Short-Channel Effects of GaAs MESFET's
The Impact of Drain Impurity Profile and Junction Depth on Submicron MOSFETs
