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Publications by H. D. Summers

The Measured Dependence of the Lateral Ambipolar Diffusion Length on Carrier Injection-Level in Stranski-Krastanov Quantum Dot Devices

Journal of Applied Physics

English

Related publications

Ambipolar Carrier Diffusion in In0.53Ga0.47As Single Quantum Wells

Brazilian Journal of Physics

English

Tuning InAs/GaAs Quantum Dot Properties Under Stranski-Krastanov Growth Mode for 1.3 Μm Applications

Journal of Applied Physics

English

Stranski-Krastanov InN/InGaN Quantum Dots Grown Directly on Si(111)

Applied Physics Letters

English

Anomalous Stranski-Krastanov Growth of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness

Scientific Reports

Multidisciplinary

English

Direct Determination of the Ambipolar Diffusion Length in Strained InxGa1−xAs/InP Quantum Wells by Cathodoluminescence

Applied Physics Letters

English

Direct Determination of the Ambipolar Diffusion Length in GaAs/AlGaAs Heterostructures by Cathodoluminescence

Applied Physics Letters

English

Lateral Diffusion in an Archipelago. Distance Dependence of the Diffusion Coefficient

Biophysical Journal

English

Influence of the Carrier Reservoir Dimensionality on Electron-Electron Scattering in Quantum Dot Materials

Physical Review B

English

Critical Role of a Buried Interface in the Stranski-Krastanov Growth of Metallic Nanocrystals: Quantum Size Effects in Ag/Si(111)-(7×7)

Physical Review Letters

English