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Publications by H. Shtrikmann
Submicrometric Heavily Doped N-GaAs Structures for Microwave Detection
Acta Physica Polonica A
Astronomy
Physics
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GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base
Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Largeg-Factor Fluctuations in Highly-N-Doped GaAs
Physical Review Letters
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Acoustoelectric Transient Spectroscopy of Microwave Treated GaAs-based Structures
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
Optical
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Asymmetrically Doped GaAs/AlGaAs Double-Quantum-Well Structure for Voltage-Tunable Infrared Detection
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy
Journal of Applied Physics
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Time-Resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors
Medziagotyra
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Selfsimilar Analysis of N-Type Delta-Doped Quasiregular GaAs Quantum Wells
Nova Scientia
N ‐Doped InGaP Nanowire Shells in GaAs/InGaP Core‐Shell Pn ‐Junctions
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
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Features of Formation of Microwave GaAs Structures on Homo and Hetero-Transitions for the Sub-Microconnection of the Lsic Structures
EasternEuropean Journal of Enterprise Technologies
Control
Electronic Engineering
Industrial
Mechanical Engineering
Energy Engineering
Applied Mathematics
Systems Engineering
Manufacturing Engineering
Computer Science Applications
Electrical
Innovation
Management of Technology
Power Technology