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Publications by H.Z. Zhang
Dual-Mode Bipolar Resistance Switching in the HfO2 RRAM Device
Progress of Chromium Migration and Transformation in Groundwater-Rock Interface
Related publications
Correction: Interface-Engineered Reliable HfO2-based RRAM for Synaptic Simulation
Journal of Materials Chemistry C
Materials Chemistry
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Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Scenario Using Novel Cu/GeOx/W Memory Device
Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
Nanoscale Research Letters
Materials Science
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Condensed Matter Physics
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Total Ionizing Dose (TID) Effects of Γ Ray Radiation on Switching Behaviors of Ag/AlOx/Pt RRAM Device
Nanoscale Research Letters
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Bipolar Resistive Switching in a Single Layer Memory Device Based on a Conjugated Copolymer
Applied Physics Letters
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A New Type of Fast-Switching Dual-Mode Ferrite Phase Shifter
IEEE Transactions on Microwave Theory and Techniques
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Electrical Characterization and Modeling of 1t-1r RRAM Arrays With Amorphous and Poly-Crystalline HfO2
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
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Optical
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Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
IEEE Electron Device Letters
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Longitudinal Mode-Switching Dynamics in a Dual External-Cavity Laser Diode [Optical Neural Network]
IEEE Journal of Quantum Electronics
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