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Publications by Hangyang Chen
High Density GaN/AlN Quantum Dots for Deep UV LED With High Quantum Efficiency and Temperature Stability
Scientific Reports
Multidisciplinary
Modification of Strain and Optical Polarization Property in AlGaN Multiple Quantum Wells by Introducing Ultrathin AlN Layer
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Related publications
Strong Electric Field and Nonuniformity Effects in GaN∕AlN Quantum Dots Revealed by High Pressure Studies
Applied Physics Letters
Astronomy
Physics
Pyrophosphate Phosphor Solid Solution With High Quantum Efficiency and Thermal Stability for Efficient LED Lighting
iScience
Multidisciplinary
Deep Ultraviolet Emitting AlGaN Quantum Wells With High Internal Quantum Efficiency
Applied Physics Letters
Astronomy
Physics
Polar Interface Vibrations in GaN/AlN Quantum Dots: Essential Effects of Crystal Anisotropy
Physical Review B
High–temperature Droplet Epitaxy of Symmetric GaAs/AlGaAs Quantum Dots
Scientific Reports
Multidisciplinary
High Efficiency InGaN/GaN Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells
Applied Physics Letters
Astronomy
Physics
Extremely High Internal Quantum Efficiencies From AlGaN/AlN Quantum Wells Emitting in the Deep Ultraviolet Spectral Region
Applied Physics Letters
Astronomy
Physics
Self-Assembled GaN Quantum Wires on GaN/AlN Nanowire Templates
Nanoscale
Materials Science
Nanotechnology
Nanoscience
Ultrafast Nonlinear Optical Response in GaN/AlN Quantum Dots for Optical Switching Applications at 1.55 Μm