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Publications by Hiroshi Kanbe
Analysis of a Wafer Bonded Ge∕Si Heterojunction by Transmission Electron Microscopy
Applied Physics Letters
Astronomy
Physics
Related publications
Band Discontinuity Measurements of the Wafer Bonded InGaAs∕Si Heterojunction
Applied Physics Letters
Astronomy
Physics
Nitridation Mechanism of Si Compacts Studied by Transmission Electron Microscopy
Materials Transactions, JIM
Integrated Waveguide PIN Photodiodes Exploiting Lateral Si/Ge/Si Heterojunction
Optics Express
Optics
Atomic
Molecular Physics,
In-Situ Growth of MnAs Nanocrystals in Si Studied by Transmission Electron Microscopy
Microscopy and Microanalysis
Instrumentation
Recent Progress in Materials Analysis by Transmission Electron Microscopy
Materials Transactions, JIM
Cross-Sectional Transmission Electron Microscopy Analysis of {311} Defects From Si Implantation Into Silicon
Applied Physics Letters
Astronomy
Physics
Dislocation Analysis of a Mg–Al–Ca Alloy by Transmission Electron Microscopy
Keikinzoku/Journal of Japan Institute of Light Metals
Mechanics of Materials
Alloys
Materials Chemistry
Metals
Mechanical Engineering
Meso-Structure Study of a Porous SiO2 Thin Film on (001) Si by Transmission Electron Microscopy
Microscopy and Microanalysis
Instrumentation
Three-Dimensional a-Si/a-Ge Radial Heterojunction Near-Infrared Photovoltaic Detector
Scientific Reports
Multidisciplinary
