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Publications by Holger Wenckstern
Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Related publications
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Brazilian Journal of Physics
Astronomy
Physics
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors
Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
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Physics
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Journal of Applied Physics
Astronomy
Physics
Effect of Intravalley Acoustic Phonon Scattering on Quantum Transport in Multigate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate
Applied Physics Letters
Astronomy
Physics
Engineering of Amorphous Polymeric Insulators for Organic Field-Effect Transistors
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
