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Publications by Hsin-Ming Cheng
Evolution of Complementary Resistive Switching Characteristics Using IrOx/GdOx/Al2O3/TiN Structure
Applied Physics Letters
Astronomy
Physics
Optical, Excitonic, and Electronic Properties of CH3NH3PbI3 Thin Films and Their Application in Photovoltaics
Related publications
Nonlinear and Complementary Resistive Switching Behaviors of Au/Ti/TaOx/TiN Devices Dependent on Ti Thicknesses
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
Enhanced Resistive Switching Characteristics in Pt/BaTiO3/Ito Structures Through Insertion of HfO2:Al2O3 (HAO) Dielectric Thin Layer
Scientific Reports
Multidisciplinary
Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
Nanomaterials
Materials Science
Chemical Engineering
Resistive Switching Characteristics of a SiOxLayer With CF4Plasma Treatment
Journal of Nanomaterials
Materials Science
Nanotechnology
Nanoscience
Electroforming-Free Resistive Switching Memory Effect in Transparent P-Type Tin Monoxide
Applied Physics Letters
Astronomy
Physics
Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO X /TiO X /TiN Structure
Nano-Micro Letters
Surfaces
Electronic Engineering
Nanoscience
Optical
Electrical
Magnetic Materials
Films
Nanotechnology
Electronic
Coatings
Nano Crossbar Array of Complementary Resistive Switches With Nonlinear Memristive Characteristics
International Journal of Advance Engineering and Research Development
Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory
Scientific Reports
Multidisciplinary
