Discover open access scientific publications

Search, annotate, share and cite publications

Publications by J. Agostinho Moreira

Enhanced Resistive Switching Characteristics in Pt/BaTiO3/Ito Structures Through Insertion of HfO2:Al2O3 (HAO) Dielectric Thin Layer

Scientific Reports

Multidisciplinary

English

Related publications

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Nanoscale Research Letters

Materials Science

Condensed Matter Physics

English

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Materials Science

Chemical Engineering

English

Bipolar Resistive Switching Characteristics of Low Temperature Grown ZnO Thin Films by Plasma-Enhanced Atomic Layer Deposition

Applied Physics Letters

English

Interface Effect on Dielectric Constant of HfO2∕Al2O3 Nanolaminate Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Applied Physics Letters

English

The Impact of Bending and Light Exposure on the Resistive Switching Characteristics of Transparent Flexible ITO/ZnO/ITO Resistive RAM (RRAM)

English

Evolution of Complementary Resistive Switching Characteristics Using IrOx/GdOx/Al2O3/TiN Structure

Applied Physics Letters

English

Bi-Stable Resistive Switching Characteristics in Ti-Doped ZnO Thin Films

Nanoscale Research Letters

Materials Science

Condensed Matter Physics

English

Model of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application

International Journal of Innovative Technology and Exploring Engineering

Mechanics of Materials

Electronic Engineering

Structural Engineering

Computer Science

English

A Forming-Free Bipolar Resistive Switching Behavior Based on ITO/V2O5/ITO Structure

Applied Physics Letters

English