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Publications by J. Lin

Enhancement-Mode In0.53Ga0.47As N-Mosfet With Self-Aligned Gate-First Process and CVD HfAlO Gate Dielectric

English

Related publications

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

Multidisciplinary

English

Hall Mobility Measurements in Enhancement-Mode GaAs Field-Effect Transistors With Al2O3 Gate Dielectric

Applied Physics Letters

English

Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

Journal of Applied Physics

English

AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric

Electronics Letters

Electronic Engineering

English

Sub-Micron, Metal Gate, High-&#X043A; Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets

English

Double-Gate MOSFET Based Reconfigurable Cells

Electronics Letters

Electronic Engineering

English

60 Nm Self-Aligned-Gate InGaAs HEMTs With Record High-Frequency Characteristics

English

Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted N-Mosfet Layout

International Scholarly Research Notices

English

Design Consideration and Impact of Gate Length Variation on Junctionless Strained Double Gate MOSFET

International Journal of Recent Technology and Engineering

Management of Technology

English