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Publications by J. P. Pelz

Quantum Well Behavior of Single Stacking Fault 3C Inclusions in 4h-SiC P-I-N Diodes Studied by Ballistic Electron Emission Microscopy

Applied Physics Letters

English

Erratum: “High-Quality InAsyP1−y Step-Graded Buffer by Molecular-Beam Epitaxy” [Appl. Phys. Lett. 82, 3212 (2003)]

Applied Physics Letters

English

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Ballistic Electron Emission Microscopy Study of PtSi–n-Si(100) Schottky Diodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

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Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes

Applied Physics Express

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X-Ray Diffuse Scattering From Stacking Faults in Thick 3c-SiC Single Crystals

Applied Physics Letters

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Research of P-I-N Junctions Based on 4h-SiC Fabricated by Low-Temperature Diffusion of Boron

Advances in Materials Science and Engineering

Materials Science

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Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

Materials Science Forum

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Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics

English

Two Mechanisms of the Negative-Effective-Mass Instability in P-Type Quantum Well-Based Ballistic P+pp+-Diodes: Simulations With a Load

Applied Physics Letters

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Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes

Applied Physics Letters

English