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Publications by J. R. Lindemuth

Carrier Compensation and Scattering Mechanisms in Si-Doped InAsyP1−y Layers Grown on InP Substrates Using Intermediate InAsyP1−y Step-Graded Buffers

Journal of Applied Physics

English

Related publications

Erratum: “High-Quality InAsyP1−y Step-Graded Buffer by Molecular-Beam Epitaxy” [Appl. Phys. Lett. 82, 3212 (2003)]

Applied Physics Letters

English

Materials Properties and Dislocation Dynamics in InAsP Compositionally Graded Buffers on InP Substrates

Journal of Applied Physics

English

Scaling Laws in PZT Thin Films Grown on Si(001) and Nb-Doped SrTiO3(001) Substrates

Brazilian Journal of Physics

English

Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

Active and Passive Electronic Components

Electronic Engineering

Magnetic Materials

English

Formation of Palladium Silicide Thin Layers on Si(110) Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Growth and Characterization of Epitaxial Layers of Ge on Si Substrates

English

Energetics and Carrier Transport in Doped Si/SiO2 Quantum Dots

Materials Science

English

Impurity-Free Disordering Mechanisms in GaAs-based Structures Using Doped Spin-On Silica Layers

Applied Physics Letters

English

Raman Analysis of Zn1-xMgxSe Layers Grown on GaAs and ZnTe Substrates

Acta Physica Polonica A

English