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Publications by J.R. Botha

Transport Characteristics of Pd Schottky Barrier Diodes on Epitaxial N-GaSb as Determined From Temperature Dependent Current–voltage Measurements

Thin Solid Films
SurfacesAlloysOpticalInterfacesMetalsMaterials ChemistryMagnetic MaterialsFilmsCoatingsElectronic
2015English

Related publications

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/N-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

Materials Transactions
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2015English

Inhomogeneous Barrier Height Effect on the Current–voltage Characteristics of an Au/N-InP Schottky Diode

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2015English

Electrical Transport Characteristics of Au/N-GaAs Schottky Diodes on N-Ge at Low Temperatures

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2001English

Effects of the Epitaxial Layer Thickness on the Noise Properties of Schottky Barrier Diodes

Journal of Applied Physics
AstronomyPhysics
1999English

Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes

Applied Physics Letters
AstronomyPhysics
2005English

Temperature Dependent Simulation of Diamond Depleted Schottky PIN Diodes

Journal of Applied Physics
AstronomyPhysics
2016English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Crystals
Materials ScienceInorganic ChemistryChemical EngineeringCondensed Matter Physics
2019English

Accurately Measuring Current-Voltage Characteristics of Tunnel Diodes

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2006English

Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2012English

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