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Publications by Jennifer Ott
Passivation of Detector‐Grade FZ‐Si With ALD‐Grown Aluminium Oxide
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Related publications
Surface Passivation of Black Silicon by Thermal ALD Deposited Aluminum Oxide
Passivation Characteristics of New Silicon Oxide
IEEE Journal of Photovoltaics
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Lattice Sites and Stability of Implanted Er in FZ and CZ Si
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Mechanical and Physical Properties of Aluminium-Silicon (Al-Si) Casting Alloys Reinforced by Zinc Oxide (ZnO)
MATEC Web of Conferences
Materials Science
Engineering
Chemistry
Effects of Surface States and Si-Interlayer Based Surface Passivation on GaAs Quantum Wires Grown by Selective Molecular Beam Epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Low-Temperature, Chemically Grown Titanium Oxide Thin Films With a High Hole Tunneling Rate for Si Solar Cells
Energies
Control
Electronic Engineering
Energy Engineering
Renewable Energy
Energy
Fuel Technology
Sustainability
Optimization
Electrical
Power Technology
the Environment
Photoelectrochemical Behavior of N-Type Si(100) Electrodes Coated With Thin Films of Manganese Oxide Grown by Atomic Layer Deposition
Journal of Physical Chemistry C
Surfaces
Energy
Nanoscience
Theoretical Chemistry
Optical
Magnetic Materials
Films
Nanotechnology
Electronic
Coatings
Physical
Effective AlN-passivation for Improving ALD-Al2O3/GaAs Interface in MOS Structures Using MOCVD
