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Publications by Jing Chong
Mobility Limitations Due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure
Journal of Nanomaterials
Materials Science
Nanotechnology
Nanoscience
Related publications
Influence of the Ratio of Gate Length to Drain-To-Source Distance on the Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Investigation of the Interface Between Silicon Nitride Passivations and AlGaN/AlN/GaN Heterostructures by C(V) Characterization of Metal-Insulator-Semiconductor-Heterostructure Capacitors
Journal of Applied Physics
Astronomy
Physics
Modeling of GaN/AlN Heterostructure-Based Nano Pressure Sensors
Simulation Study on Electrical Characteristic of AlGaN/GaN High Electron Mobility Transistors With AlN Spacer Layer
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Terahertz Radiation Emission by Hot Electrons From AlGaN/GaN Heterostructure
Acta Physica Polonica A
Astronomy
Physics
Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Dislocations at the Interface Between Sapphire and GaN
Journal of Materials Science: Materials in Electronics
Electronic Engineering
Biomedical Engineering
Condensed Matter Physics
Biomaterials
Electronic
Molecular Physics,
Biophysics
Optical
Electrical
Atomic
Magnetic Materials
Bioengineering
Optics
