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Publications by K.-B. Park
Quantum Well Behavior of Single Stacking Fault 3C Inclusions in 4h-SiC P-I-N Diodes Studied by Ballistic Electron Emission Microscopy
Applied Physics Letters
Astronomy
Physics
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Ballistic Electron Emission Microscopy Study of PtSi–n-Si(100) Schottky Diodes
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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes
Crystals
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Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes
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X-Ray Diffuse Scattering From Stacking Faults in Thick 3c-SiC Single Crystals
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Research of P-I-N Junctions Based on 4h-SiC Fabricated by Low-Temperature Diffusion of Boron
Advances in Materials Science and Engineering
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Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC
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Deep Levels in Iron Doped N- And P-Type 4h-SiC
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Two Mechanisms of the Negative-Effective-Mass Instability in P-Type Quantum Well-Based Ballistic P+pp+-Diodes: Simulations With a Load
Applied Physics Letters
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Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes
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