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Publications by Kenneth Steeples

Implant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique

2007English

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Optical Flatness Metrology for 300 Mm Silicon Wafers

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Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization

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Atomic Scale Thickness Control of SOI Wafers for Fully Depleted Applications

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Low Voltage SOI Circuit Technology

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Bandwidth Enhancement Technique for TIA Using Flipped Voltage Follower

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Morphological Method for Surface Metrology and Dimensional Metrology Based on the Alpha Shape

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Challenges of Smaller Particle Detection on Both Bulk-Silicon and SOI Wafers

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Conoscopic Interferometry of Wafers for Surface-Acoustic Wave Devices

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