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Publications by M. Feng

InP∕InGaAs SHBTs With 75 Nm Collector and fT>500 GHz

Electronics Letters
Electronic EngineeringElectrical
2003English

Related publications

Laser Ranging at 1550 Nm With 1-GHz Sine-Wave Gated InGaAs/InP APD Single-Photon Detector

Optics Express
OpticsAtomicMolecular Physics,
2011English

Comprehensive Characterization of InGaAs–InP Avalanche Photodiodes at 1550 Nm With an Active Quenching ASIC

IEEE Journal of Quantum Electronics
Electronic EngineeringCondensed Matter PhysicsMolecular Physics,ElectricalAtomicOptics
2009English

Photosensitivity and Noise of Ultrafast InGaAs/InP Avalanche Photodiodes

Lithuanian Journal of Physics
AstronomyPhysics
2006English

Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth Profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures

Acta Physica Polonica A
AstronomyPhysics
1996English

InP-based Lattice-Matched InGaAsP and Strain-Compensated InGaAs∕InGaAs Quantum Well Cells for Thermophotovoltaic Applications

Journal of Applied Physics
AstronomyPhysics
2006English

Strain Relaxation and Stress-Driven Interdiffusion in InAs∕InGaAs∕InP Nanowires

Applied Physics Letters
AstronomyPhysics
2007English

Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation

Applied Physics Research
2016English

InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
1992English

Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions

1990English

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