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Publications by M. Sakuraba
Atomic Layer-By-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD
Le Journal de Physique IV
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Atomic Layer Epitaxy of IV Group Semiconductors.
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Study on Property of Atomic Layer Epitaxy Growth of InN by Using Indium Chloride
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Formation of InGaAs Fins by Atomic Layer Epitaxy on InP Sidewalls
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Silicon Surface Passivation by Atomic Layer Deposited Al2O3
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Single Atomic Layer Ferroelectric on Silicon
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Suppression of Ion-Implantation Induced Porosity in Germanium by a Silicon Dioxide Capping Layer
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Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.
SHINKU