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Publications by M. Sochacki
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface
Acta Physica Polonica A
Astronomy
Physics
Related publications
Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes
Crystals
Materials Science
Inorganic Chemistry
Chemical Engineering
Condensed Matter Physics
Characterization of MOS Capacitors Fabricated on N-Type 4h-SiC Implanted With Nitrogen at High Dose
Materials Science Forum
Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Ohmic Contacts on P-Type Al-Implanted 4h-SiC Layers After Different Post-Implantation Annealings
Materials
Materials Science
Condensed Matter Physics
Deep Levels in Iron Doped N- And P-Type 4h-SiC
Journal of Applied Physics
Astronomy
Physics
Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC
Materials Science Forum
Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC
Journal of Applied Physics
Astronomy
Physics
The Channeling Effect of Al and N Ion Implantation in 4H–SiC During JFET Integrated Device Processing
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
Impact of Acceptor Concentration on Electrical Properties and Density of Interface States of 4h-SiC N-Metal-Oxide-Semiconductor Field Effect Transistors Studied by Hall Effect
Applied Physics Letters
Astronomy
Physics
