Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by M.-X. Zhang
High Switching Endurance in TaOx Memristive Devices
Applied Physics Letters
Astronomy
Physics
Related publications
Volatile Resistive Switching in Cu/TaOx/Δ-Cu/Pt Devices
Applied Physics Letters
Astronomy
Physics
Selective Activation of Memristive Interfaces in TaOx-based Devices by Controlling Oxygen Vacancies Dynamics at the Nanoscale
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
Switching Mechanism of TaOx ReRAM
Nonlinear and Complementary Resistive Switching Behaviors of Au/Ti/TaOx/TiN Devices Dependent on Ti Thicknesses
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
A Memristive Switching Uncertainty Model
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
TaOx-based Resistive Switching Memories: Prospective and Challenges
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Formation Free and High-Performance Cross-Point Resistive Switching Memory Using Ir/TaOx/W Structure
Nanoparticle Dynamics in Oxide‐Based Memristive Devices
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Facile Fabrication of Complex Networks of Memristive Devices
Scientific Reports
Multidisciplinary
