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Publications by Marie Laure Locatelli
Improved Annealing Process for 6h-SiC P+-N Junction Creation by Al Implantation
Materials Science Forum
Related publications
Microwave Annealing of Ion Implanted 6h-SiC
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
GaN Layers Grown by HVPE on P-Type 6h-SiC Substrates
MRS Internet Journal of Nitride Semiconductor Research
Raman Mapping of 4‐MeV C and Si Channeling Implantation of 6H‐SiC
Journal of Raman Spectroscopy
Materials Science
Spectroscopy
Primary Photoluminescence in As-Neutron (Electron) -Irradiated N-Type 6h-SiC
Journal of Applied Physics
Astronomy
Physics
Preparation of Improved P-N Junction NiO/TiO2Nanotubes for Solar-Energy-Driven Light Photocatalysis
International Journal of Photoenergy
Materials Science
Renewable Energy
Molecular Physics,
Sustainability
Atomic
Chemistry
Optics
the Environment
Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
Materials
Materials Science
Condensed Matter Physics
Ohmic Contacts on P-Type Al-Implanted 4h-SiC Layers After Different Post-Implantation Annealings
Materials
Materials Science
Condensed Matter Physics
Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC
Journal of Applied Physics
Astronomy
Physics
Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation
