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Publications by Mark C. Rosamund

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

English

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Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Pushing Extreme Ultraviolet Lithography Development Beyond 22 Nm Half Pitch

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Chemically Amplified Si-Contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and Its Application to Bi-Layer Resist Process.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution With Sensitivity for Next-Generation Lithography

English

Study on Resist Performance of Chemically Amplified Molecular Resists Based on Cyclic Oligomers

Microelectronic Engineering

Electronic Engineering

Condensed Matter Physics

Molecular Physics,

Magnetic Materials

English

Guest Editorial: Extreme Ultraviolet Interference Lithography

Journal of Micro/ Nanolithography, MEMS, and MOEMS

Electronic Engineering

Condensed Matter Physics

Mechanical Engineering

Molecular Physics,

Magnetic Materials

English

Intense Plasma Discharge Source at 135 Nm for Extreme-Ultraviolet Lithography

Molecular Physics,

English

Power Scaling of an Extreme Ultraviolet Light Source for Future Lithography

Applied Physics Letters

English