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Publications by Masao Nishioka
Effect of Growth Temperature of GaAs/Al_0.4Ga_0.6As Lower Cladding Layer on the Photoluminescence Intensity of InAs/Sb:GaAs Quantum Dots Monolithically Grown on Ge/Si Substrate by MOCVD for Laser Application
Contouring of Planar Cam. 2nd Report. Contour Constituted by Circular Arcs.
Nippon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C
Mechanics of Materials
Industrial
Mechanical Engineering
Manufacturing Engineering
Related publications
Photoreflectance Characterization of InAs/GaAs Self-Assembled Quantum Dots Grown by ALMBE
European Physical Journal B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Post-Growth Thermal Treatment of the InAs/GaAs Quantum Dots
Anomalous Photoluminescence Behavior From Amorphous Ge Quantum Dots Produced by Buffer-Layer-Assisted Growth
Applied Physics Letters
Astronomy
Physics
Temperature-Dependent Modulated Reflectance and Photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs Quantum Dot Heterostructures
Optical and Quantum Electronics
Electronic Engineering
Electronic
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Optics
Nonthermal Laser-Induced Formation of Crystalline Ge Quantum Dots on Si(100)
Journal of Applied Physics
Astronomy
Physics
Pseudomorphic Growth of InAs on Misoriented GaAs for Extending Quantum Cascade Laser Wavelength
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Thermal Annealing of InAs Quantum Dots on Patterned GaAs Substrates
Dichroic Reflection of InAs∕GaAs Quantum Dots
Journal of Applied Physics
Astronomy
Physics
Recessed Oxynitride Dots on Self-Assembled Ge Quantum Dots Grown by LPD
Electrochemical and Solid-State Letters
