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Publications by Mike Jennings

Electrical Activation of Nitrogen Heavily Implanted 3c-SiC(100)

Applied Surface Science

Condensed Matter Physics

English

Main Differences in Processing Si and SiC Devices

English

Related publications

Lattice Location Study of Low-Fluence Ion-Implanted 124In in 3c-SiC

Journal of Applied Physics

English

Growth Mechanism of (111)-Textured 3c-SiC Films on Si(100) Substrates

Microscopy and Microanalysis

Instrumentation

English

Growth Rate Effect on 3c-SiC Film Residual Stress on (100) Si Substrates

Materials Science Forum

English

Микрокристаллическая Структура И Светоизлучающие Свойства 3c-SiC Островковых Пленок, Выращиваемых На Поверхности Si(100)

Журнал технической физики

English

Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Materials Research Letters

Materials Science

English

Microwave Annealing of Ion Implanted 6h-SiC

Materials Research Society Symposium - Proceedings

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

Characterization of MOS Capacitors Fabricated on N-Type 4h-SiC Implanted With Nitrogen at High Dose

Materials Science Forum

English

Appearance of Local Strain Fields and High Electrical Conductivity of Macro-Defects in P+-Implanted 4h-SiC

Journal of Applied Physics

English

Annealing of Cd‐implanted GaAs: Defect Removal, Lattice Site Occupation, and Electrical Activation

Journal of Applied Physics

English