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Publications by Ming-Tsong Wang
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Related publications
Improved Electrical Properties of Metal-Oxide-Semiconductor Capacitor With HfTiON Gate Dielectric by Using HfSiON Interlayer
Applied Physics Letters
Astronomy
Physics
Improved Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitor With HfTa-based Gate Dielectric by Using TaOxNy Interlayer
Applied Physics Letters
Astronomy
Physics
Parallel Core−Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate
Applied Physics Letters
Astronomy
Physics
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Journal of Applied Physics
Astronomy
Physics
Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors
Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics