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Publications by Mingle Liao

Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Systems Engineering

Mechanical Engineering

Electronic Engineering

English

Related publications

High Efficiency InGaN/GaN Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells

Applied Physics Letters

English

Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness

Applied Physics Letters

English

Improvement of Light Output Power of InGaN/GaN Light-Emitting Diode by Lateral Epitaxial Overgrowth Using Pyramidal-Shaped SiO_2

Molecular Physics,

English

Band Structure of Interdiffused InGaN/GaN Quantum Wells

English

Optical and Microstructural Studies of Atomically Flat Ultrathin In-Rich InGaN∕GaN Multiple Quantum Wells

Journal of Applied Physics

English

Polariton Lasing in InGaN Quantum Wells at Room Temperature

Opto-Electronic Advances

English

Does in Form In-Rich Clusters in InGaN Quantum Wells?

Philosophical Magazine

Condensed Matter Physics

English

Strain Induced Variations in Band Offsets and Built-In Electric Fields in InGaN/GaN Multiple Quantum Wells

Journal of Applied Physics

English

Lattice Parameter Measurement of Strained Layer Multiple Quantum Well in Buried Laser Diode

English