Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Mitsuhiro Tomita
Improvement in the Asymmetric VFB Shift of Poly-Si/HfSiON/Si by Inserting Oxygen Diffusion Barrier Layers Into the Interfaces
Related publications
Threshold Voltage Instability of 45-Nm-Node Poly-Si- Or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si
Surface Roughness at the Si–SiO2 Interfaces in Fully Depleted Silicon-On-Insulator Inversion Layers
Journal of Applied Physics
Astronomy
Physics
Relation Between Schottky Barrier Height and Crystallographic Alignment at Al/Si Interfaces.
Hyomen Kagaku
Aligned Al:ZnO Nanorods on Si With Different Barrier Layers for Optoelectronic Applications
Chemical Physics Letters
Theoretical Chemistry
Astronomy
Physics
Physical
Formation of Si-Based Nanosheets by Extraction of Ca From CaSi2 Layers on Si Substrates
Journal of the Ceramic Society of Japan
Materials Chemistry
Chemistry
Condensed Matter Physics
Composites
Ceramics
Intercalation of Si Between MoS2 Layers
Beilstein Journal of Nanotechnology
Electronic Engineering
Materials Science
Nanoscience
Electrical
Nanotechnology
Astronomy
Physics
Sub-Barrier Fusion of Si + Si Systems: Does the Deformation of 28Si Play a Role?
Improvement of Performance of InAs Quantum Dot Solar Cell by Inserting Thin AlAs Layers
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Simulations of the Dislocation Array at Ge/Si Interfaces
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering