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Publications by N. Baron
Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale
Applied Physics Letters
Astronomy
Physics
Related publications
Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
COMPARATIVE ANALYSIS OF AlGaN/GaN MICROWAVE TRANSISTORS
Electronic engineering. Series 2. Semiconductor device
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Reduced Turn-On Voltage for NPN Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
Advances in Materials Science and Engineering
Materials Science
Engineering
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
On the Link Between Electroluminescence, Gate Current Leakage, and Surface Defects in AlGaN/GaN High Electron Mobility Transistors Upon Off-State Stress
Applied Physics Letters
Astronomy
Physics
Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
