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Publications by N. Monsegue
Defect Assistant Band Alignment Transition From Staggered to Broken Gap in Mixed as/Sb Tunnel Field Effect Transistor Heterostructure
Journal of Applied Physics
Astronomy
Physics
Related publications
Band Offset Determination of Mixed as/Sb Type-Ii Staggered Gap Heterostructure for N-Channel Tunnel Field Effect Transistor Application
Journal of Applied Physics
Astronomy
Physics
Broken-Gap Type-Iii Band Alignment in WTe2/HfS2 Van Der Waals Heterostructure
Field Effect Transistor and Photo Transistor of Narrow Band Gap Nanocrystal Arrays Using Ionic Glasses
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Hydrogenated Monolayer Graphene With Reversible and Tunable Wide Band Gap and Its Field-Effect Transistor
Nature Communications
Astronomy
Genetics
Molecular Biology
Biochemistry
Chemistry
Physics
Controllable Band Alignment Transition in InSe-MoS2 Van Der Waals Heterostructure (Phys. Status Solidi RRL 7/2018)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Characteristics of a Carbon Nanotube Field-Effect Transistor Analyzed as a Ballistic Nanowire Field-Effect Transistor
Journal of Applied Physics
Astronomy
Physics
Correction to “Deep Defect States in Wide-Band-Gap ABX3 Halide Perovskites”
ACS Energy Letters
Chemistry
Energy Engineering
Renewable Energy
Fuel Technology
Sustainability
Materials Chemistry
Power Technology
the Environment
Extreme Sensitivity of the Electric-Field-Induced Band Gap to the Electronic Topological Transition in Sliding Bilayer Graphene
Scientific Reports
Multidisciplinary
