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Publications by N. Tansu

Temperature Analysis and Characteristics of Highly Strained InGaAs-GaAsP-GaAs (Λ &Lt; 1.17 Μm) Quantum-Well Lasers

IEEE Journal of Quantum Electronics

Electronic Engineering

Condensed Matter Physics

Molecular Physics,

English

InP-based Dilute-Nitride Mid-Infrared Type-Ii “W” Quantum-Well Lasers

Journal of Applied Physics

English

Related publications

Intermixing in Strained InGaAs/GaAs Quantum-Well Infrared Photodetectors

Applied Physics Letters

English

Low Frequency Noise of a 980 Nm InGaAs/GaAs Strained Quantum Well Laser

Journal de Physique III

English

Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

Acta Physica Polonica A

English

The Influence of Growth Conditions on Carrier Recombination Mechanisms in 1.3 Μm GaAsSb/GaAs Quantum Well Lasers

Applied Physics Letters

English

Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Wells

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Fabrication and Modulation Characteristics of InGaAsP/InGaAsP MQW DCPBH Lasers at Λ∼1.57 Μm

Applied Physics B: Lasers and Optics

English

Temperature-Dependent Modulated Reflectance and Photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs Quantum Dot Heterostructures

Optical and Quantum Electronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English

Instability of Homogeneous Composition of Highly Strained Quantum Wells in Heterostructures GaAs/InxGa1-xAs/GaAs

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English

1.24 Μm InGaAs/GaAs Quantum Dot Laser Grown by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Applied Physics Letters

English