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Publications by Nicolas Wichmann
Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET
PLoS ONE
Multidisciplinary
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Enhancement-Mode In0.53Ga0.47As N-Mosfet With Self-Aligned Gate-First Process and CVD HfAlO Gate Dielectric
Design Consideration and Impact of Gate Length Variation on Junctionless Strained Double Gate MOSFET
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Effects of Depleted Poly-Si Gate on MOSFET Performance
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Self-Aligned Capillary-Assisted Printing of Bottom-Gate Electrolyte-Gated Transistors on Plastic
Design of Booth Multiplier Using Double Gate MOSFET
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60 Nm Self-Aligned-Gate InGaAs HEMTs With Record High-Frequency Characteristics
Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors
AIP Advances
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Impact of Gate-Length Biasing on Threshold-Voltage Selection
