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Publications by Nobuyuki Matsuzawa

Chemically Amplified Si-Contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and Its Application to Bi-Layer Resist Process.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Diffusion Kinetic of Vapor-Phase Silylation Process for ArF Lithography.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Related publications

Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

English

Metallic Resist for Phase-Change Lithography

Scientific Reports

Multidisciplinary

English

Effect of Substrate Treatments on Resist Footing in Chemically Amplified System.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Implementation of ArF Resist Processes for 130nm and Below.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Highly-Efficient Photoacid Generators for ArF Resist.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Evaluation of Resist Capability for EUV Lithography

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Design of Novel ArF Negative Resist System for Phase-Shifting Lithography Using Androsterone Structure With .DELTA.-Hydroxy Acid.

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English

Basic Aspects of Acid Generation Processes in Chemically Amplified Electron Beam Resist

Journal of Photopolymer Science and Technology

Organic Chemistry

Materials Chemistry

English