Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Ousmane I Barry
Reduction of Residual Impurities in Homoepitaxial M -Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Related publications
Residual Doping in Homoepitaxial Zinc Oxide Layers Grown by Metal Organic Vapor Phase Epitaxy
Applied Physics Express
Engineering
Astronomy
Physics
GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
Local Control of Exchange Bias by Resistive Switching (Phys. Status Solidi RRL 12/2018)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Contents: Phys. Status Solidi RRL 12/2016
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Contents: (Phys. Status Solidi RRL 12/2017)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Contents: Phys. Status Solidi RRL 5/2014
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Migration of Mg and Other Interstitial Metal Dopants in GaN (Phys. Status Solidi RRL 7/2017)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Issue Information: Phys. Status Solidi RRL 2/2017
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Cover Picture: Growth of SrTiO3on Si(001) by Hybrid Molecular Beam Epitaxy (Phys. Status Solidi RRL 11/2014)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics