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Publications by P. Pichler
Impact of Acceptor Concentration on Electrical Properties and Density of Interface States of 4h-SiC N-Metal-Oxide-Semiconductor Field Effect Transistors Studied by Hall Effect
Applied Physics Letters
Astronomy
Physics
Related publications
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Brazilian Journal of Physics
Astronomy
Physics
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Journal of Applied Physics
Astronomy
Physics
7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
Electronics Letters
Electronic Engineering
Electrical
Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Effect of Intravalley Acoustic Phonon Scattering on Quantum Transport in Multigate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate
Applied Physics Letters
Astronomy
Physics
Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
