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Publications by P. Tchoulfian
Thermoelectric and Micro-Raman Measurements of Carrier Density and Mobility in Heavily Si-Doped GaN Wires
Applied Physics Letters
Astronomy
Physics
Related publications
Influence of a Carrier Supply Layer on Carrier Density and Drift Mobility of AlGaN/GaN/SiC High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Analysis of Heavily Boron-Doped Diamond Raman Spectrum
Diamond and Related Materials
Electronic Engineering
Astronomy
Mechanical Engineering
Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Chemistry
Electronic
Near-Infrared Free Carrier Absorption in Heavily Doped Silicon
Journal of Applied Physics
Astronomy
Physics
Thermoelectric and Bulk Mobility Measurements in Pentacene Thin Films
Applied Physics Letters
Astronomy
Physics
Synthesis and Thermoelectric Properties of Carrier-Doped CuFeS2 Sintered Samples
Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Alloys
Industrial
Mechanical Engineering
Metals
Materials Chemistry
Manufacturing Engineering
Characteristics of Unintentionally Doped and Lightly Si-Doped GaN Prepared via Pulsed Sputtering
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Energetics and Carrier Transport in Doped Si/SiO2 Quantum Dots
Nanoscale
Materials Science
Nanotechnology
Nanoscience
Characterization of Heavily Doped Polysilicon Films for CMOS-MEMS Thermoelectric Power Generators
Journal of Micromechanics and Microengineering
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Nanoscience
Optical
Electrical
Magnetic Materials
Nanotechnology
Electronic
Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.
