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Publications by Patrick Fay
New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes
Physical Review X
Astronomy
Physics
GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on Bulk GaN Substrates
Applied Physics Letters
Astronomy
Physics
Ion-Implant Isolated Vertical GaN P-N Diodes Fabricated With Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi a 4∕2019)
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Avalanche Multiplication Noise in GaN P‐n Junctions Grown on Native GaN Substrates
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics