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Publications by Patrick Fay

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Physical Review X
AstronomyPhysics
2017English

GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on Bulk GaN Substrates

Applied Physics Letters
AstronomyPhysics
2018English

Ion-Implant Isolated Vertical GaN P-N Diodes Fabricated With Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi a 4∕2019)

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2019English

Avalanche Multiplication Noise in GaN P‐n Junctions Grown on Native GaN Substrates

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2019English

Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2013English

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