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Publications by Pauline Burtin

Low Damage Patterning of In0.53Ga0.47As Film for Its Integration as N-Channel in a Fin Metal Oxide Semiconductor Field Effect Transistor Architecture

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
2018English

Related publications

High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures

Journal of Applied Physics
AstronomyPhysics
2012English

Tunneling Spectroscopy of Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperature

Applied Physics Letters
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2005English

Integration of a Resonant‐tunneling Structure With a Metal‐semiconductor Field‐effect Transistor

Applied Physics Letters
AstronomyPhysics
1987English

Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2004English

Complementary Metal Oxide Semiconductor Image Sensor Using a Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector for High-Speed Binary Operation

Sensors and Materials
Materials ScienceInstrumentation
2018English

Metal-Oxide-Semiconductor Field Effect Transistor Humidity Sensor Using Surface Conductance

Applied Physics Letters
AstronomyPhysics
2012English

Technology Computer-Aided Design Simulation Study for a Strained InGaAs Channel N-Type Metal-Oxide-Semiconductor Field-Effect Transistor With a High-K Dielectric Oxide Layer and a Metal Gate Electrode

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SurfacesElectronic EngineeringCondensed Matter PhysicsInstrumentationElectronicOpticalMaterials ChemistryElectricalMagnetic MaterialsFilmsProcess ChemistryCoatingsTechnology
2011English

Evaluation of Performance of Metal Oxide-Silicon Semiconductor Field Effect Transistor (MOSFET) Dosimeter

Nippon Hoshasen Gijutsu Gakkai zasshi
Medicine
2001English

Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

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