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Publications by Peter R. Wilshaw
On the C-Si/SiO2 Interface Recombination Parameters From Photo-Conductance Decay Measurements
Journal of Applied Physics
Astronomy
Physics
An Investigation Into Fracture of Multi-Crystalline Silicon
Solid State Phenomena
Materials Science
Condensed Matter Physics
Optics
Atomic
Molecular Physics,
Related publications
Mechanical Stability of Ultrathin Ge∕Si Film on SiO2: The Effect of Si∕SiO2 Interface
Journal of Applied Physics
Astronomy
Physics
Erratum: Electron‐hole Recombination at the Si‐SiO2 Interface [Appl. Phys. Lett. 48, 245 (1986)]
Applied Physics Letters
Astronomy
Physics
Influence of Backsurface Argon Bombardment on SiO2–Si Interface Characteristics
Applied Physics Letters
Astronomy
Physics
Structures and Electronic States of Si/SiO2 Interface.
Hyomen Kagaku
Study of SiO2/Si Interface by Surface Techniques
White Luminescence From Si+ and C+ Ion-Implanted SiO2 Films
Journal of Applied Physics
Astronomy
Physics
Modulating the Field-Effect Passivation at the SiO2/c-Si Interface: Analysis and Verification of the Photoluminescence Imaging Under Applied Bias Method
Journal of Applied Physics
Astronomy
Physics
The Effect of Recombination on the Primary Photo-Electric Current From a Crystal
Physical Review
Simulation of Quality of SiC/Si Interface During MBE Deposition of C on Si
Materialwissenschaft und Werkstofftechnik
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
