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Publications by Q. T. Zhao
Segregation of Ion Implanted Sulfur in Si(100) After Annealing and Nickel Silicidation
Journal of Applied Physics
Astronomy
Physics
Related publications
Defects Annealing of Si+ Implanted GaAs at RT and 100°C
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si
ECS Journal of Solid State Science and Technology
Optical
Electronic
Magnetic Materials
Microwave Annealing of Ion Implanted 6h-SiC
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Change of Electrophysical Properties of the Si(111) and Si(100) Surface in the Process of Ion Implantation and Next Annealing
Eurasian Journal of Physics and Functional Materials
MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures
Influence of Grain Boundary Character and Annealing Time on Segregation in Commercially Pure Nickel
Journal of Materials
INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING
Le Journal de Physique Colloques
Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1,100 C
Evolution of Vacancy-Related Defects Upon Annealing of Ion-Implanted Germanium
Physical Review B
