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Publications by R. Droopad

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

ECS Transactions
Engineering
2015English

180 Nm Metal Gate, High-K Dielectric, Implant-Free III–V MOSFETs With Transconductance of Over 425 [Micro Sign]S∕[micro Sign]m

Electronics Letters
Electronic EngineeringElectrical
2007English

Sub-Micron, Metal Gate, High-к Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets

2007English

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