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Publications by R. Falster
The Annealing Mechanism of the Radiation-Induced Vacancy-Oxygen Defect in Silicon
Journal of Applied Physics
Astronomy
Physics
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Effects of Annealing With CO and CO2 Molecules on Oxygen Vacancy Defect Density in Amorphous SiO2 Formed by Thermal Oxidation of SiC
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Oxygen Vacancy Induced Electronic Structure Variation in the La0.2Sr0.8MnO3 Thin Film
AIP Advances
Nanotechnology
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Nanoscience
On the Ab Initio Calculation of Vibrational Formation Entropy of Point Defect: The Case of the Silicon Vacancy
EPJ Photovoltaics
Electronic Engineering
Condensed Matter Physics
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Sustainability
Optical
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the Environment
Oxygen Vacancy Induced Surface Stabilization: (110) Terminated Magnetite
Physical Review B
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Annealing of Radiation-Induced Defects in Polycrystalline Bismuth
Radiation-Induced Defect Introduction Rates in Semiconductors
IEEE Transactions on Nuclear Science
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Nuclear
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High Energy Physics
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Dynamics and Mechanism of Oxygen Annealing in Fe1+yTe0.6Se0.4 Single Crystal
Scientific Reports
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Effect of Thermally Induced Oxygen Vacancy of -MnO2 Nanorods Toward Oxygen Reduction Reaction
Crystallization Mechanism of Nanocrystalline Silicon Fabricated by Hydrogen Radical Annealing